Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic
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چکیده
منابع مشابه
Ultralow-power GaAs MESFET MSI circuits using two-phase dynamic FET logic
Two-phase dynamic FET !ogic (TDFL) gates are used in GaAs MESFET MSI circuits to implement very low power 4-b ripple carry adders and a variable modulus (2 to 31) prescaler. Operation of the adders is demonstrated at 500 MHz with an associated power dissipation of less than 1.0 mW and at 750 MHz with p d = 1.7 mW. The prescaler, which contains 166 TDFL gates and 79 static gates, i s shown to op...
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 1993
ISSN: 0018-9200
DOI: 10.1109/4.237519